rev.4.00 sep 07, 2005 page 1 of 6 h7n0312ab silicon n channel mos fet high speed power switching rej03g1127-0400 (previous: ade-208-1571b) rev.4.00 sep 07, 2005 features ? low on-resistance r ds (on) = 2.6 m ? typ. ? low drive current ? 4.5 v gate drive device can be driven from 5 v source outline renesas package code: prss0004ac-a (package name: to-220ab) d g s 1. gate 2. drain (flange) 3. source 1 2 3
h7n0312ab rev.4.00 sep 07, 2005 page 2 of 6 absolute maximum ratings (ta = 25 c) item symbol value unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 85 a drain peak current i d (pulse) note 1 340 a body-drain diode reverse drain current i dr 85 a channel dissipation pch note 2 125 w channel to case thermal impedance ch-c 1.0 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br) dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br) gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs (off) 1.0 ? 2.5 v i d = 1 ma, v ds = 10 v note 3 ? 2.6 3.3 m ? i d = 42.5 a, v gs = 10 v note 3 static drain to source on state resistance r ds (on) ? 4.0 5.8 m ? i d = 42.5 a, v gs = 4.5 v note 3 forward transfer admittance |y fs | 75 125 ? s i d = 42.5 a, v ds = 10 v note 3 input capacitance ciss ? 6900 ? pf output capacitance coss ? 1750 ? pf reverse transfer capacitance crss ? 820 ? pf v ds = 10 v v gs = 0 f = 1 mhz total gate charge qg ? 115 ? nc gate to source charge qgs ? 24 ? nc gate to drain charge qgd ? 24 ? nc v dd = 10 v v gs = 10 v i d = 85 a turn-on delay time t d (on) ? 45 ? ns rise time t r ? 380 ? ns turn-off delay time t d (off) ? 125 ? ns fall time t f ? 50 ? ns v gs = 10 v, i d = 42.5 a r l = 0.24 ? rg = 4.7 ? body-drain diode forward voltage v df ? 0.92 ? v i f = 85 a, v gs = 0 body-drain diode reverse recovery time t rr ? 75 ? ns i f = 85 a, v gs = 0 di f /dt = 50 a/ s note: 3. pulse test
h7n0312ab rev.4.00 sep 07, 2005 page 3 of 6 main characteristics drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 100 80 60 40 20 0 100 80 60 40 20 0 012345 tc = 75c 25c ?25c 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 v ds = 10 v pulse test 1000 160 0 0 40 80 120 50 100 150 200 channel dissipation pch (w) case temperature tc (c) power vs. temperature derating gate to source voltage v gs (v) drain to source voltage v ds(on) (mv) drain to source saturation voltage vs. gate to source voltage drain current i d (a) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. drain current 500 400 300 200 100 0 048121620 30 10 3 1 11030300 pulse test i d = 50 a 10 a 20 a 0.1 3 100 1000 0.3 100 02468 10 10 v 5 v 4 v 3.5 v 3.2 v 3.0 v 2.8 v pulse test v gs = 2.5 v tc = 25c 1 shot pulse operation in this area is limited by r ds (on) 100 s 10 s 1 ms v gs = 4.5 v 10 v pulse test pw = 10 ms dc operation
h7n0312ab rev.4.00 sep 07, 2005 page 4 of 6 case temperature tc (c) static drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) drain current i d (a) forward transfer admittance vs. drain current 7 ?25 0 25 75 125 50 100 150 0 2 4 1 3 5 6 i d = 50 a i d = 10 a, 20 a 10 a, 20 a, 50 a v gs = 4.5 v 10 v pulse test 330 0.1 1 10 100 0.3 100 1000 300 1 0.3 10 3 30 0.1 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 0 5 10 15 20 25 30 10000 3000 1000 300 100 ciss coss crss v gs = 0 f = 1 mhz 50 40 30 20 10 0 0 20 16 12 8 4 40 80 120 160 200 0 i d = 85 a v gs v ds v dd = 25 v 10 v 5 v v dd = 5 v 10 v 25 v gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 0.1 0.3 1 3 10 30 100 100 20 50 10 di / dt = 50 a / s v gs = 0, ta = 25c reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time 100 200 500 20 0.1 0.3 10 100 30 3 drain current i d (a) switching time t (ns) switching characteristics 1 1000 50 10 tc = ?25c v ds = 10 v pulse test 75c 25c t r t d(on) t d(off) t f v gs = 10 v, v ds = 10 v rg = 4.7 ? , duty 1 %
h7n0312ab rev.4.00 sep 07, 2005 page 5 of 6 source to drain voltage v sd (v) reverse drain current i dr (a) 100 0 0 20 40 60 80 0.4 0.8 1.2 1.6 2.0 reverse drain current vs. souece to drain voltage pulse test 5 v v gs = 0 v 10 v pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 tc = 25c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse p dm pw t d = pw t ch ? c (t) = s (t) ch ? c ch ? c = 1.0 c/w, tc = 25 c
h7n0312ab rev.4.00 sep 07, 2005 page 6 of 6 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?0.1 3.6 +0.1 ?0.08 package name prss0004ac-a to-220ab / to-220abv mass[typ.] 1.8g sc-46 renesas code jeita package code unit: mm ordering information part name quantity shipping container h7n0312ab-e 500 pcs box (sack) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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